Two-Stage OTA design using gm/Id methodology
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Designed two-stage OTA in 45 nm CMOS using gm/Id sizing for target specs. Achieved 52 dB gain, 187 MHz UGBW, 7 ns settling time, 800 mV output swing while consuming 99 μW power.
Designed two-stage OTA in 45 nm CMOS using gm/Id sizing for target specs. Achieved 52 dB gain, 187 MHz UGBW, 7 ns settling time, 800 mV output swing while consuming 99 μW power.